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| SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw CDBS00340 Io = 30mA VR = 40 Volt s Features Designed for mounting on small surface Extremely thin package Low stored charge Majority carrier conduction 0805(2012) 0.087(2.20) 0.079(2.00) 0.016(0.40) Typ Mechanical data Case: 0805(2012) Standard package, molded plastic. Terminals: Solder plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. Mounting position: Any. 0.008(R0.20) Typ. 0.055(1.40) 0.047(1.20) 0.043 (1.10) 0.035(0.90) Dimensions in inches and (millimeter) Weight: 0.0048 gram. (approximately) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current , surge peak Power Dissipation Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit VRRM VR IO IFSM PD TSTG Tj -40 -40 500 200 +125 +125 45 40 30 V V mA mA mW C C Electrical Characteristics ( at T A = 25 C Parameter Forward voltage Reverse current Reverse current IF = 1 mA DC VR = 40 V VR = 30 V unless otherwise noted ) Symbol Min Typ Max Unit VF IR IR CT 2 0.37 1 0.5 V uA uA pF Conditions Capacitance between terminals f = 1MHz, and 1 VDC reverse voltage RDS0208005-C Page 1 SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (CDBS00340) Fig. 1 - Forward characteristics 10m 100u Fig. 1 - Forward characteristics 125 C Reverse current (A ) Forward current ( A ) 10u 1m 75 C 1u 75 C C 100u -2 5 C 125 25 C 100n 25 C 10u 0 0.1 0.2 0.3 0.4 0.5 0.6 10n 0 10 20 30 40 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Capacitance between terminals (pF) 20 Fig. 4 - Current derating curve Average forward current ( % ) Mounting on glass epoxy PCBs f = 1 MHz Ta = 25 C 10 100 80 60 1 40 20 0.1 0 5 10 15 0 20 25 30 0 25 50 75 100 125 150 Reverse voltage (V) Ambient temperature ( C ) RDS0208005-C Page 2 |
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